IC DRAM 512MBIT PARALLEL 60TFBGA
Type | Description |
---|---|
Series: | - |
Package: | Tape & Reel (TR) |
Part Status: | Not For New Designs |
Memory Type: | Volatile |
Memory Format: | DRAM |
Technology: | SDRAM - DDR |
Memory Size: | 512Mb (64M x 8) |
Memory Interface: | Parallel |
Clock Frequency: | 166 MHz |
Write Cycle Time - Word, Page: | 15ns |
Access Time: | 700 ps |
Voltage - Supply: | 2.3V ~ 2.7V |
Operating Temperature: | 0°C ~ 70°C (TA) |
Mounting Type: | Surface Mount |
Package / Case: | 60-TFBGA |
Supplier Device Package: | 60-TFBGA (8x13) |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
71P72804S167BQGIRochester Electronics |
18MBIT PIPELINED QDRII SRAM |
|
CY14MB064J1A-SXIRochester Electronics |
NON-VOLATILE SRAM, 8KX8, CMOS, P |
|
CYDMX064A16-65BVXIRochester Electronics |
IC SRAM 64KBIT PARALLEL 100VFBGA |
|
24LC01BHT-I/OTRoving Networks / Microchip Technology |
IC EEPROM 1KBIT I2C SOT23-5 |
|
M95160-WDW6TPSTMicroelectronics |
IC EEPROM 16KBIT SPI 8TSSOP |
|
CY7C144-15JXIRochester Electronics |
IC SRAM 64KBIT PARALLEL 68PLCC |
|
CY62147G30-45ZSXATCypress Semiconductor |
IC SRAM 4MBIT PARALLEL 44TSOP II |
|
CY7C1339F-100BGIRochester Electronics |
CACHE SRAM, 128KX32, 4.5NS |
|
CAT25160VI-G-CSRochester Electronics |
IC EEPROM 16KBIT SPI 20MHZ 8SOIC |
|
BU9883FV-WE2ROHM Semiconductor |
IC EEPROM 6KBIT I2C 16SSOPB |
|
AT34C02BN-10SU-1.7Rochester Electronics |
EEPROM, 256X8, SERIAL, CMOS |
|
IS46TR16128DL-125KBLA2ISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 2GBIT PARALLEL 96TWBGA |
|
MX25L3255EM2I-10GMacronix |
IC FLASH 32MBIT SPI 104MHZ 8SOP |