IC DRAM 1GBIT PARALLEL 60TWBGA
Type | Description |
---|---|
Series: | - |
Package: | Tape & Reel (TR) |
Part Status: | Active |
Memory Type: | Volatile |
Memory Format: | DRAM |
Technology: | SDRAM - DDR2 |
Memory Size: | 1Gb (128M x 8) |
Memory Interface: | Parallel |
Clock Frequency: | 400 MHz |
Write Cycle Time - Word, Page: | 15ns |
Access Time: | 400 ps |
Voltage - Supply: | 1.7V ~ 1.9V |
Operating Temperature: | -40°C ~ 85°C (TA) |
Mounting Type: | Surface Mount |
Package / Case: | 60-TFBGA |
Supplier Device Package: | 60-TWBGA (8x10.5) |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
MT29F1G01ABAFD12-IT:F TRMicron Technology |
IC FLASH 1GBIT SPI 24TPBGA |
|
S25FL512SAGMFBG13Cypress Semiconductor |
IC FLASH 512MBIT SPI/QUAD 16SOIC |
|
S26KL128SDABHA030Cypress Semiconductor |
IC FLASH 128MBIT PARALLEL 24FBGA |
|
24AA00-I/PRoving Networks / Microchip Technology |
IC EEPROM 128B I2C 400KHZ 8DIP |
|
IS42S86400F-6TLI-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 512MBIT PAR 54TSOP II |
|
25AA160/PRoving Networks / Microchip Technology |
IC EEPROM 16KBIT SPI 1MHZ 8DIP |
|
IS42S83200G-6TL-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 256MBIT PAR 54TSOP II |
|
CY7C1347D-166ACRochester Electronics |
CACHE SRAM, 128KX36, 3.5NS |
|
IS61LPS12836EC-200TQLI-TRISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 4.5MBIT PARALLEL 100LQFP |
|
SST39VF010-70-4I-NHERoving Networks / Microchip Technology |
IC FLASH 1MBIT PARALLEL 32PLCC |
|
CY7C1354SV25-200AXCRochester Electronics |
IC SRAM 9MBIT PARALLEL 100TQFP |
|
24VL024H/SNRoving Networks / Microchip Technology |
IC EEPROM 2KBIT I2C 400KHZ 8SOIC |
|
71016S20YGI8Renesas Electronics America |
IC SRAM 1MBIT PARALLEL 44SOJ |