IC DRAM 512MBIT PARALLEL 66TSOP
Type | Description |
---|---|
Series: | - |
Package: | Tape & Reel (TR)Cut Tape (CT) |
Part Status: | Active |
Memory Type: | Volatile |
Memory Format: | DRAM |
Technology: | SDRAM - DDR |
Memory Size: | 512Mb (32M x 16) |
Memory Interface: | Parallel |
Clock Frequency: | 200 MHz |
Write Cycle Time - Word, Page: | 15ns |
Access Time: | 700 ps |
Voltage - Supply: | 2.5V ~ 2.7V |
Operating Temperature: | 0°C ~ 70°C (TA) |
Mounting Type: | Surface Mount |
Package / Case: | 66-TSSOP (0.400", 10.16mm Width) |
Supplier Device Package: | 66-TSOP |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
MX25L6408EZNI-12GMacronix |
IC FLASH 64MBIT SPI 86MHZ 8WSON |
|
LE2464RDXATDGRochester Electronics |
IC EEPROM 64KBIT I2C 1MHZ 6WLCSP |
|
SST39VF1602C-70-4C-EKERoving Networks / Microchip Technology |
IC FLASH 16MBIT PARALLEL 48TSOP |
|
24AA024HT-I/MNYRoving Networks / Microchip Technology |
IC EEPROM 2KBIT I2C 400KHZ 8TDFN |
|
DS28E01P-100+Maxim Integrated |
IC EEPROM 1KBIT 1-WIRE 6TSOC |
|
SST39LF400A-55-4C-B3KERoving Networks / Microchip Technology |
IC FLASH 4MBIT PARALLEL 48TFBGA |
|
S29GL128S10DHSS20Cypress Semiconductor |
IC FLASH 128MBIT PARALLEL 64FBGA |
|
AS4C1M16S-6TCNAlliance Memory, Inc. |
IC DRAM 16MBIT PAR 50TSOP II |
|
BR95040-WMN6TPROHM Semiconductor |
IC EEPROM 4KBIT SPI 5MHZ 8SO |
|
IS43LR16160G-6BLI-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 256MBIT PARALLEL 60TFBGA |
|
70V657S10BCGRenesas Electronics America |
IC SRAM 1.125MBIT PAR 256CABGA |
|
CAT24M01XI-T2Sanyo Semiconductor/ON Semiconductor |
IC EEPROM 1MBIT I2C 1MHZ 8SOIC |
|
FM27C010V150Rochester Electronics |
IC EPROM 1MBIT PARALLEL 32PLCC |