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NTE4969

NTE4969

TRANS SUPP 110V BI-DIR

CY7C1313V18-200BZC

CY7C1313V18-200BZC

QDR SRAM, 1MX18, 0.45NS

ED-27230-P100

ED-27230-P100

SPEAKER SMD

CY7C1313V18-200BZC

CY7C1313V18-200BZC

Image is for reference, please contact us to get the real picture

Part No :

CY7C1313V18-200BZC

Manufacturer
Rochester Electronics
Description
QDR SRAM, 1MX18, 0.45NS
Catalog
Memory
Availability
10341 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 26 - Nov 30 2024
Type Description
Series:-
Package:Bulk
Part Status:Active
Memory Type:Volatile
Memory Format:SRAM
Technology:SRAM - Synchronous, QDR II
Memory Size:18Mb (1M x 18)
Memory Interface:Parallel
Clock Frequency:200 MHz
Write Cycle Time - Word, Page:-
Access Time:-
Voltage - Supply:1.7V ~ 1.9V
Operating Temperature:0°C ~ 70°C (TA)
Mounting Type:Surface Mount
Package / Case:165-LBGA
Supplier Device Package:165-FBGA (13x15)
CY7C1313V18-200BZC is available at GangBo-ic.com, Please review product page below for detailed information, including CY7C1313V18-200BZC price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for CY7C1313V18-200BZC to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK

Office Hours : Mon-Fri, 9:00-18:30(GMT+8)

[email protected]

Phone: 00852-52612101

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