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NE5517DR2G

NE5517DR2G

IC OPAMP TRANSCOND 2 CIRC 16SOIC

NE5517DR2G

NE5517DR2G

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Part No :

NE5517DR2G

Manufacturer
Sanyo Semiconductor/ON Semiconductor
Description
IC OPAMP TRANSCOND 2 CIRC 16SOIC
Catalog
Linear - Amplifiers - Instrumentation, OP Amps, Buffer Amps
Availability
11513 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 28 - Dec 02 2024
PDF
NE5517DR2G PDF
Type Description
Series:-
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
Amplifier Type:Transconductance
Number of Circuits:2
Output Type:Push-Pull
Slew Rate:50V/µs
Gain Bandwidth Product:2 MHz
-3db Bandwidth:-
Current - Input Bias:400 nA
Voltage - Input Offset:400 µV
Current - Supply:2.6mA
Current - Output / Channel:500 µA
Voltage - Supply, Single/Dual (±):4V ~ 44V, ±2V ~ 22V
Operating Temperature:0°C ~ 70°C
Mounting Type:Surface Mount
Package / Case:16-SOIC (0.154", 3.90mm Width)
Supplier Device Package:16-SOIC
NE5517DR2G is available at GangBo-ic.com, Please review product page below for detailed information, including NE5517DR2G price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for NE5517DR2G to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK

Office Hours : Mon-Fri, 9:00-18:30(GMT+8)

[email protected]

Phone: 00852-52612101

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