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NUS5530MNR2G

NUS5530MNR2G

POWER FIELD-EFFECT TRANSISTOR, 3

NUS5530MNR2G

NUS5530MNR2G

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Part No :

NUS5530MNR2G

Manufacturer
Rochester Electronics
Description
POWER FIELD-EFFECT TRANSISTOR, 3
Catalog
Transistors - Special Purpose
Availability
105255 pieces
Shipped from
HK warehouse
Expected Shipping Date
Dec 28 - Jan 01 2024
PDF
NUS5530MNR2G PDF
Type Description
Series:-
Package:Bulk
Part Status:Active
Transistor Type:NPN, P-Channel
Applications:General Purpose
Voltage - Rated:35V PNP, 20V P-Channel
Current Rating (Amps):2A PNP, 3.9A P-Channel
Mounting Type:Surface Mount
Package / Case:8-VDFN Exposed Pad
Supplier Device Package:8-DFN-EP (3.3x3.3)
NUS5530MNR2G is available at GangBo-ic.com, Please review product page below for detailed information, including NUS5530MNR2G price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for NUS5530MNR2G to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

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