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IJW120R100T1FKSA1

IJW120R100T1FKSA1

POWER FIELD-EFFECT TRANSISTOR

IJW120R100T1FKSA1

IJW120R100T1FKSA1

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Part No :

IJW120R100T1FKSA1

Manufacturer
Rochester Electronics
Description
POWER FIELD-EFFECT TRANSISTOR
Catalog
Transistors - JFETs
Availability
16902 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 26 - Nov 30 2024
PDF
IJW120R100T1FKSA1 PDF
Type Description
Series:-
Package:Tube
Part Status:Obsolete
FET Type:N-Channel
Voltage - Breakdown (V(BR)GSS):-
Drain to Source Voltage (Vdss):1.2 V
Current - Drain (Idss) @ Vds (Vgs=0):1.5 µA @ 1.2 V
Current Drain (Id) - Max:26 A
Voltage - Cutoff (VGS off) @ Id:-
Input Capacitance (Ciss) (Max) @ Vds:1550pF @ 19.5V (VGS)
Resistance - RDS(On):100 mOhms
Power - Max:190 W
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Package / Case:TO-247-3
Supplier Device Package:PG-TO247-3
IJW120R100T1FKSA1 is available at GangBo-ic.com, Please review product page below for detailed information, including IJW120R100T1FKSA1 price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for IJW120R100T1FKSA1 to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

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