CAP CER 0.068UF 100V C0G/NP0 RAD
DISC IGBT PT-MID FREQUENCY TO-24
Type | Description |
---|---|
Series: | GenX3™ |
Package: | Tube |
Part Status: | Obsolete |
IGBT Type: | PT |
Voltage - Collector Emitter Breakdown (Max): | 600 V |
Current - Collector (Ic) (Max): | 130 A |
Current - Collector Pulsed (Icm): | 350 A |
Vce(on) (Max) @ Vge, Ic: | 1.8V @ 15V, 44A |
Power - Max: | 330 W |
Switching Energy: | 1.3mJ (on), 1.05mJ (off) |
Input Type: | Standard |
Gate Charge: | 138 nC |
Td (on/off) @ 25°C: | 26ns/155ns |
Test Condition: | 480V, 44A, 5Ohm, 15V |
Reverse Recovery Time (trr): | 41 ns |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | TO-247-3 |
Supplier Device Package: | TO-247 (IXXH) |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
SIGC12T60NCX1SA4IR (Infineon Technologies) |
IGBT 3 CHIP 600V WAFER |
|
NGTD28T65F2SWKSanyo Semiconductor/ON Semiconductor |
IGBT TRENCH FIELD STOP 650V DIE |
|
LGB8204ATIWickmann / Littelfuse |
IGBT 430V 18A 115W D2PAK3 |
|
IRG7PK42UD1PBFIR (Infineon Technologies) |
IGBT 1200V DIE |
|
IGC50T120T8RLX7SA2IR (Infineon Technologies) |
IGBT 1200V 50A DIE |
|
SIGC25T60NCX1SA5IR (Infineon Technologies) |
IGBT 3 CHIP 600V WAFER |
|
IRG4BAC50W-SIR (Infineon Technologies) |
IGBT 600V 55A 200W SUPER 220 |
|
LGB15N41ATIWickmann / Littelfuse |
IGBT 440V 15A 107W D2PAK3 |
|
IRG7CH75UED-RIR (Infineon Technologies) |
IGBT 1200V ULTRA FAST DIE |
|
XGS8206AUIWickmann / Littelfuse |
IGBT N-CH 20A D2PAK |
|
SIGC156T60NR2CX7SA1IR (Infineon Technologies) |
IGBT 3 CHIP 600V WAFER |
|
IRG7CH73UED-RIR (Infineon Technologies) |
IGBT 1200V ULTRA FAST DIE |
|
IRG7CH75UEF-RIR (Infineon Technologies) |
IGBT 1200V ULTRA FAST DIE |