IGBT 600V 60A 220W TO-263AA
TRANSISTOR
Type | Description |
---|---|
Series: | GenX3™ |
Package: | Tube |
Part Status: | Obsolete |
IGBT Type: | PT |
Voltage - Collector Emitter Breakdown (Max): | 600 V |
Current - Collector (Ic) (Max): | 60 A |
Current - Collector Pulsed (Icm): | 150 A |
Vce(on) (Max) @ Vge, Ic: | 3V @ 15V, 20A |
Power - Max: | 220 W |
Switching Energy: | 270µJ (on), 90µJ (off) |
Input Type: | Standard |
Gate Charge: | 38 ns |
Td (on/off) @ 25°C: | 16ns/42ns |
Test Condition: | 300V, 20A, 5Ohm, 15V |
Reverse Recovery Time (trr): | 26 ns |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Supplier Device Package: | TO-263 (IXGA) |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
SIGC25T60NCX1SA7IR (Infineon Technologies) |
IGBT 3 CHIP 600V WAFER |
|
IRG4CC30FBIR (Infineon Technologies) |
IGBT CHIP |
|
78124Microsemi |
TRANSISTOR |
|
IRG4CC40UBIR (Infineon Technologies) |
IGBT CHIP |
|
SIGC14T60NCX7SA1IR (Infineon Technologies) |
IGBT 3 CHIP 600V WAFER |
|
IRG7CH73UEF-RIR (Infineon Technologies) |
IGBT 1200V ULTRA FAST DIE |
|
PCG60N60SFFSanyo Semiconductor/ON Semiconductor |
IGBT PCG60N60SFF |
|
SIGC81T60SNCX7SA1IR (Infineon Technologies) |
IGBT 3 CHIP 600V WAFER |
|
SIGC07T60NCX1SA1IR (Infineon Technologies) |
IGBT 3 CHIP 600V WAFER |
|
STKSF1U3E2D-ESanyo Semiconductor/ON Semiconductor |
STKSF1U3E2D-E |
|
PCRH30120WSanyo Semiconductor/ON Semiconductor |
IGBT PCRH30120W |
|
LGB8207BTHWickmann / Littelfuse |
IGBT 365V 20A 165W D2PAK3 |
|
APT70GR65B2SCD30Microsemi |
INSULATED GATE BIPOLAR TRANSISTO |