







IC EEPROM 2KBIT I2C 400KHZ 8DFN
TERM BLOCK HDR 8POS 90DEG 7.5MM
.050 SOCKET DISCRETE CABLE ASSEM
IGBT 2500V 35A TO247AD
| Type | Description |
|---|---|
| Series: | XPT™ |
| Package: | Tube |
| Part Status: | Active |
| IGBT Type: | - |
| Voltage - Collector Emitter Breakdown (Max): | 2500 V |
| Current - Collector (Ic) (Max): | 35 A |
| Current - Collector Pulsed (Icm): | 126 A |
| Vce(on) (Max) @ Vge, Ic: | 4V @ 15V, 16A |
| Power - Max: | 500 W |
| Switching Energy: | 4.75mJ (on), 3.9mJ (off) |
| Input Type: | Standard |
| Gate Charge: | 97 nC |
| Td (on/off) @ 25°C: | 14ns/260ns |
| Test Condition: | 1250V, 16A, 10Ohm, 15V |
| Reverse Recovery Time (trr): | 19 ns |
| Operating Temperature: | -55°C ~ 175°C (TJ) |
| Mounting Type: | Through Hole |
| Package / Case: | TO-247-3 |
| Supplier Device Package: | TO-247AD |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
|
|
SIGC07T60SNCX1SA4IR (Infineon Technologies) |
IGBT 3 CHIP 600V WAFER |
|
|
RJP4009ANS-01#Q5Renesas Electronics America |
IGBT NCH 400V 8VSON |
|
|
SIGC18T60SNCX7SA2IR (Infineon Technologies) |
IGBT 3 CHIP 600V WAFER |
|
|
PCISL9R860WSanyo Semiconductor/ON Semiconductor |
IGBT PCISL9R860W |
|
|
SIGC42T60UNX7SA2IR (Infineon Technologies) |
IGBT 3 CHIP 600V WAFER |
|
|
IRG4CC80SBIR (Infineon Technologies) |
IGBT CHIP |
|
|
SIGC18T60SNCX1SA3IR (Infineon Technologies) |
IGBT 3 CHIP 600V WAFER |
|
|
STGF20V60DFSTMicroelectronics |
IGBT BIPO 600V 20A TO-220 |
|
|
IRG7PK42UD1-EPBFIR (Infineon Technologies) |
IGBT 1200V ULTRA FAST TO247 |
|
|
SIGC28T60EX1SA4IR (Infineon Technologies) |
IGBT CHIP |
|
|
SIGC25T60NCX7SA1IR (Infineon Technologies) |
IGBT 3 CHIP 600V WAFER |
|
|
IEWS20R5135IPBXKLA1IR (Infineon Technologies) |
HOME APPLIANCES 14 |
|
|
IRG7CH75K10EF-RIR (Infineon Technologies) |
IGBT 1200V ULTRA FAST DIE |