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SIGC25T60UNX1SA1

SIGC25T60UNX1SA1

IGBT 3 CHIP 600V WAFER

SIGC25T60UNX1SA1

SIGC25T60UNX1SA1

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Part No :

SIGC25T60UNX1SA1

Manufacturer
IR (Infineon Technologies)
Description
IGBT 3 CHIP 600V WAFER
Catalog
Transistors - IGBTs - Single
Availability
099609 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 13 - Nov 17 2024
Type Description
Series:-
Package:Bulk
Part Status:Obsolete
IGBT Type:NPT
Voltage - Collector Emitter Breakdown (Max):600 V
Current - Collector (Ic) (Max):30 A
Current - Collector Pulsed (Icm):90 A
Vce(on) (Max) @ Vge, Ic:3.15V @ 15V, 30A
Power - Max:-
Switching Energy:-
Input Type:Standard
Gate Charge:-
Td (on/off) @ 25°C:16ns/122ns
Test Condition:400V, 30A, 1.8Ohm, 15V
Reverse Recovery Time (trr):-
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:Die
Supplier Device Package:Die
SIGC25T60UNX1SA1 is available at GangBo-ic.com, Please review product page below for detailed information, including SIGC25T60UNX1SA1 price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for SIGC25T60UNX1SA1 to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

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