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49-CBSA-5.0X5.0X0.4

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RF SHIELD 5" X 5" THROUGH HOLE

GT60N321(Q)

GT60N321(Q)

IGBT 1000V 60A 170W TO3P LH

GT60N321(Q)

GT60N321(Q)

Image is for reference, please contact us to get the real picture

Part No :

GT60N321(Q)

Manufacturer
Toshiba Electronic Devices and Storage Corporation
Description
IGBT 1000V 60A 170W TO3P LH
Catalog
Transistors - IGBTs - Single
Availability
209520 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 13 - Nov 17 2024
PDF
GT60N321(Q) PDF
Type Description
Series:-
Package:Tube
Part Status:Obsolete
IGBT Type:-
Voltage - Collector Emitter Breakdown (Max):1000 V
Current - Collector (Ic) (Max):60 A
Current - Collector Pulsed (Icm):120 A
Vce(on) (Max) @ Vge, Ic:2.8V @ 15V, 60A
Power - Max:170 W
Switching Energy:-
Input Type:Standard
Gate Charge:-
Td (on/off) @ 25°C:330ns/700ns
Test Condition:-
Reverse Recovery Time (trr):2.5 µs
Operating Temperature:150°C (TJ)
Mounting Type:Through Hole
Package / Case:TO-3PL
Supplier Device Package:TO-3P(LH)
GT60N321(Q) is available at GangBo-ic.com, Please review product page below for detailed information, including GT60N321(Q) price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for GT60N321(Q) to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

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