Type | Description |
---|---|
Series: | - |
Package: | Bulk |
Part Status: | Active |
IGBT Type: | - |
Voltage - Collector Emitter Breakdown (Max): | 600 V |
Current - Collector (Ic) (Max): | 140 A |
Current - Collector Pulsed (Icm): | - |
Vce(on) (Max) @ Vge, Ic: | - |
Power - Max: | - |
Switching Energy: | - |
Input Type: | Standard |
Gate Charge: | - |
Td (on/off) @ 25°C: | - |
Test Condition: | - |
Reverse Recovery Time (trr): | - |
Operating Temperature: | - |
Mounting Type: | Surface Mount |
Package / Case: | Die |
Supplier Device Package: | Die |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
SIGC07T60NCX7SA1IR (Infineon Technologies) |
IGBT 3 CHIP 600V WAFER |
|
SIGC14T60SNCX7SA2IR (Infineon Technologies) |
IGBT 3 CHIP 600V WAFER |
|
FID36-06DWickmann / Littelfuse |
IGBT 600V 38A 125W I4PAC5 |
|
SIGC14T60NCX1SA1IR (Infineon Technologies) |
IGBT 3 CHIP 600V WAFER |
|
APT70GR65B2DU40Microsemi |
INSULATED GATE BIPOLAR TRANSISTO |
|
SIGC54T60R3EX7SA1IR (Infineon Technologies) |
IGBT 3 CHIP 600V 100A WAFER |
|
SIGC18T60NCX1SA1IR (Infineon Technologies) |
IGBT 3 CHIP 600V WAFER |
|
SIGC07T60NCX1SA4IR (Infineon Technologies) |
IGBT 3 CHIP 600V WAFER |
|
IXGM20N60Wickmann / Littelfuse |
POWER MOSFET TO-3 |
|
1214-55PMicrosemi |
TRANSISTOR |
|
IRGC14C40LDIR (Infineon Technologies) |
IGBT IGNITION LL |
|
SIGC121T60NR2CX1SA3IR (Infineon Technologies) |
IGBT 3 CHIP 600V WAFER |
|
IGC99T120T8RQX1SA1IR (Infineon Technologies) |
IGBT CHIP |