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NGTB50N65FL2WAG

NGTB50N65FL2WAG

INSULATED GATE BIPOLAR TRANSISTO

NGTB50N65FL2WAG

NGTB50N65FL2WAG

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Part No :

NGTB50N65FL2WAG

Manufacturer
Rochester Electronics
Description
INSULATED GATE BIPOLAR TRANSISTO
Catalog
Transistors - IGBTs - Single
Availability
13654 pieces
Shipped from
HK warehouse
Expected Shipping Date
Feb 27 - Mar 03 2025
PDF
NGTB50N65FL2WAG PDF
Type Description
Series:-
Package:Bulk
Part Status:Active
IGBT Type:Field Stop
Voltage - Collector Emitter Breakdown (Max):650 V
Current - Collector (Ic) (Max):160 A
Current - Collector Pulsed (Icm):160 A
Vce(on) (Max) @ Vge, Ic:2V @ 15V, 50A
Power - Max:417 W
Switching Energy:420µJ (on), 550µJ (off)
Input Type:Standard
Gate Charge:215 nC
Td (on/off) @ 25°C:23ns/123ns
Test Condition:400V, 50A, 10Ohm, 15V
Reverse Recovery Time (trr):94 ns
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Package / Case:TO-247-4
Supplier Device Package:TO-247-4L
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