Type | Description |
---|---|
Series: | XPT™, GenX4™ |
Package: | Tube |
Part Status: | Active |
IGBT Type: | - |
Voltage - Collector Emitter Breakdown (Max): | 650 V |
Current - Collector (Ic) (Max): | 450 A |
Current - Collector Pulsed (Icm): | 1200 A |
Vce(on) (Max) @ Vge, Ic: | 1.7V @ 15V, 160A |
Power - Max: | 1200 W |
Switching Energy: | 4.4mJ (on), 3.5mJ (off) |
Input Type: | Standard |
Gate Charge: | 553 nC |
Td (on/off) @ 25°C: | 62ns/245ns |
Test Condition: | 400V, 100A, 1Ohm, 15V |
Reverse Recovery Time (trr): | 76 ns |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | 24-PowerSMD, 21 Leads |
Supplier Device Package: | 24-SMPD |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
HGTP3N60C3Rochester Electronics |
6A, 600V, N-CHANNEL IGBT |
|
IXA30RG1200DHG-TUBWickmann / Littelfuse |
IGBT PHASELEG 1200V 30A SMPD |
|
IKA15N65ET6XKSA1IR (Infineon Technologies) |
IGBT 650V 15A TO220-3 |
|
HGTG40N60C3Rochester Electronics |
75A, 600V, N-CHANNEL IGBT |
|
AFGHL50T65SQDSanyo Semiconductor/ON Semiconductor |
AEC 101 QUALIFIED, 650V, 50A FIE |
|
FGD3040G2_F085Rochester Electronics |
INSULATED GATE BIPOLAR TRANSISTO |
|
HGTP7N60C3Rochester Electronics |
14A, 600V, UFS SERIES N-CHANNEL |
|
RJP3082DPP-00#T2Rochester Electronics |
HIGH SPEED IGBT |
|
BSM100GB120DN2KRochester Electronics |
INSULATED GATE BIPOLAR TRANSISTO |
|
HGT1S20N60C3RRochester Electronics |
40A, 600V, RUGGED N-CHANNEL IGBT |
|
HGTB12N60D1CRochester Electronics |
12A, 600V N-CHANNEL IGBT |
|
RJP30E2DPP-M0#T2Rochester Electronics |
IGBT |
|
IXBF42N300Wickmann / Littelfuse |
IGBT 3000V TO247 |