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HGTP12N60C3

HGTP12N60C3

IGBT 600V 24A 104W TO220AB

RSE116703-S

RSE116703-S

STAINLESS STEEL ALTERNATIVE

HGTP12N60C3

HGTP12N60C3

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Part No :

HGTP12N60C3

Manufacturer
Sanyo Semiconductor/ON Semiconductor
Description
IGBT 600V 24A 104W TO220AB
Catalog
Transistors - IGBTs - Single
Availability
088608 pieces
Shipped from
HK warehouse
Expected Shipping Date
Sep 24 - Sep 28 2024
PDF
HGTP12N60C3 PDF
Type Description
Series:-
Package:Tube
Part Status:Obsolete
IGBT Type:-
Voltage - Collector Emitter Breakdown (Max):600 V
Current - Collector (Ic) (Max):24 A
Current - Collector Pulsed (Icm):96 A
Vce(on) (Max) @ Vge, Ic:2V @ 15V, 12A
Power - Max:104 W
Switching Energy:380µJ (on), 900µJ (off)
Input Type:Standard
Gate Charge:48 nC
Td (on/off) @ 25°C:-
Test Condition:-
Reverse Recovery Time (trr):-
Operating Temperature:-40°C ~ 150°C (TJ)
Mounting Type:Through Hole
Package / Case:TO-220-3
Supplier Device Package:TO-220-3
HGTP12N60C3 is available at GangBo-ic.com, Please review product page below for detailed information, including HGTP12N60C3 price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for HGTP12N60C3 to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

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