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AMPMDEB-8.0000T3

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HGTP2N120CN

HGTP2N120CN

IGBT 1200V 13A 104W TO220AB

HGTP2N120CN

HGTP2N120CN

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Part No :

HGTP2N120CN

Manufacturer
Sanyo Semiconductor/ON Semiconductor
Description
IGBT 1200V 13A 104W TO220AB
Catalog
Transistors - IGBTs - Single
Availability
748574 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 09 - Nov 13 2025
PDF
HGTP2N120CN PDF
Type Description
Series:-
Package:Tube
Part Status:Obsolete
IGBT Type:NPT
Voltage - Collector Emitter Breakdown (Max):1200 V
Current - Collector (Ic) (Max):13 A
Current - Collector Pulsed (Icm):20 A
Vce(on) (Max) @ Vge, Ic:2.4V @ 15V, 2.6A
Power - Max:104 W
Switching Energy:96µJ (on), 355µJ (off)
Input Type:Standard
Gate Charge:30 nC
Td (on/off) @ 25°C:25ns/205ns
Test Condition:960V, 2.6A, 51Ohm, 15V
Reverse Recovery Time (trr):-
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Package / Case:TO-220-3
Supplier Device Package:TO-220-3
HGTP2N120CN is available at GangBo-ic.com, Please review product page below for detailed information, including HGTP2N120CN price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for HGTP2N120CN to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

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