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IRGB4715DPBF

IRGB4715DPBF

IGBT WITH RECOVERY DIODE

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IRGB4715DPBF

IRGB4715DPBF

Image is for reference, please contact us to get the real picture

Part No :

IRGB4715DPBF

Manufacturer
Rochester Electronics
Description
IGBT WITH RECOVERY DIODE
Catalog
Transistors - IGBTs - Single
Availability
12900 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 13 - Nov 17 2024
PDF
IRGB4715DPBF PDF
Type Description
Series:-
Package:Tube
Part Status:Obsolete
IGBT Type:-
Voltage - Collector Emitter Breakdown (Max):650 V
Current - Collector (Ic) (Max):21 A
Current - Collector Pulsed (Icm):24 A
Vce(on) (Max) @ Vge, Ic:2V @ 15V, 8A
Power - Max:100 W
Switching Energy:200µJ (on), 90µJ (off)
Input Type:Standard
Gate Charge:30 nC
Td (on/off) @ 25°C:30ns/100ns
Test Condition:400V, 8A, 50Ohm, 15V
Reverse Recovery Time (trr):-
Operating Temperature:-40°C ~ 175°C (TJ)
Mounting Type:Through Hole
Package / Case:TO-220-3
Supplier Device Package:TO-220AB
IRGB4715DPBF is available at GangBo-ic.com, Please review product page below for detailed information, including IRGB4715DPBF price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for IRGB4715DPBF to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK

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Phone: 00852-52612101

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