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STGYA120M65DF2

STGYA120M65DF2

TRENCH GATE FIELD-STOP IGBT, M S

STGYA120M65DF2

STGYA120M65DF2

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Part No :

STGYA120M65DF2

Manufacturer
STMicroelectronics
Description
TRENCH GATE FIELD-STOP IGBT, M S
Catalog
Transistors - IGBTs - Single
Availability
10587 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 26 - Nov 30 2024
PDF
STGYA120M65DF2 PDF
Type Description
Series:M
Package:Tube
Part Status:Active
IGBT Type:NPT, Trench Field Stop
Voltage - Collector Emitter Breakdown (Max):650 V
Current - Collector (Ic) (Max):160 A
Current - Collector Pulsed (Icm):360 A
Vce(on) (Max) @ Vge, Ic:1.95V @ 15V, 120A
Power - Max:625 W
Switching Energy:1.8mJ (on), 4.41mJ (off)
Input Type:Standard
Gate Charge:420 nC
Td (on/off) @ 25°C:66ns/185ns
Test Condition:400V, 120A, 4.7Ohm, 15V
Reverse Recovery Time (trr):202 ns
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Package / Case:TO-247-3 Exposed Pad
Supplier Device Package:MAX247™
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