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NGTB30N120FL2WG

NGTB30N120FL2WG

INSULATED GATE BIPOLAR TRANSISTO

NGTB30N120FL2WG

NGTB30N120FL2WG

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Part No :

NGTB30N120FL2WG

Manufacturer
Rochester Electronics
Description
INSULATED GATE BIPOLAR TRANSISTO
Catalog
Transistors - IGBTs - Single
Availability
13694 pieces
Shipped from
HK warehouse
Expected Shipping Date
Sep 23 - Sep 27 2024
PDF
NGTB30N120FL2WG PDF
Type Description
Series:-
Package:Bulk
Part Status:Active
IGBT Type:Trench Field Stop
Voltage - Collector Emitter Breakdown (Max):1.2 V
Current - Collector (Ic) (Max):60 A
Current - Collector Pulsed (Icm):120 A
Vce(on) (Max) @ Vge, Ic:2.3V @ 15V, 30A
Power - Max:452 W
Switching Energy:2.6mJ (on), 700µJ (off)
Input Type:Standard
Gate Charge:220 nC
Td (on/off) @ 25°C:98ns/210ns
Test Condition:600V, 30A, 10Ohm, 15V
Reverse Recovery Time (trr):240 ns
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Package / Case:TO-247-3
Supplier Device Package:TO-247
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