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IRGS4715DPBF

IRGS4715DPBF

IGBT WITH RECOVERY DIODE

IRGS4715DPBF

IRGS4715DPBF

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Part No :

IRGS4715DPBF

Manufacturer
Rochester Electronics
Description
IGBT WITH RECOVERY DIODE
Catalog
Transistors - IGBTs - Single
Availability
12200 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 29 - Dec 03 2024
PDF
IRGS4715DPBF PDF
Type Description
Series:-
Package:Tube
Part Status:Obsolete
IGBT Type:-
Voltage - Collector Emitter Breakdown (Max):650 V
Current - Collector (Ic) (Max):21 A
Current - Collector Pulsed (Icm):24 A
Vce(on) (Max) @ Vge, Ic:2V @ 15V, 8A
Power - Max:100 W
Switching Energy:200µJ (on), 90µJ (off)
Input Type:Standard
Gate Charge:30 nC
Td (on/off) @ 25°C:30ns/100ns
Test Condition:400V, 8A, 50Ohm, 15V
Reverse Recovery Time (trr):86 ns
Operating Temperature:-40°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package:D2PAK
IRGS4715DPBF is available at GangBo-ic.com, Please review product page below for detailed information, including IRGS4715DPBF price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for IRGS4715DPBF to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK

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