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FGD3N60UNDF

FGD3N60UNDF

IGBT 600V 6A 60W DPAK

FGD3N60UNDF

FGD3N60UNDF

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Part No :

FGD3N60UNDF

Manufacturer
Sanyo Semiconductor/ON Semiconductor
Description
IGBT 600V 6A 60W DPAK
Catalog
Transistors - IGBTs - Single
Availability
12779 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 24 - Nov 28 2024
PDF
FGD3N60UNDF PDF
Type Description
Series:-
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
IGBT Type:NPT
Voltage - Collector Emitter Breakdown (Max):600 V
Current - Collector (Ic) (Max):6 A
Current - Collector Pulsed (Icm):9 A
Vce(on) (Max) @ Vge, Ic:2.52V @ 15V, 3A
Power - Max:60 W
Switching Energy:52µJ (on), 30µJ (off)
Input Type:Standard
Gate Charge:1.6 nC
Td (on/off) @ 25°C:5.5ns/22ns
Test Condition:400V, 3A, 10Ohm, 15V
Reverse Recovery Time (trr):21 ns
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package:TO-252, (D-Pak)
FGD3N60UNDF is available at GangBo-ic.com, Please review product page below for detailed information, including FGD3N60UNDF price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for FGD3N60UNDF to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

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