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FGY75N60SMD

FGY75N60SMD

INSULATED GATE BIPOLAR TRANSISTO

FGY75N60SMD

FGY75N60SMD

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Part No :

FGY75N60SMD

Manufacturer
Rochester Electronics
Description
INSULATED GATE BIPOLAR TRANSISTO
Catalog
Transistors - IGBTs - Single
Availability
605760 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 24 - Nov 28 2024
PDF
FGY75N60SMD PDF
Type Description
Series:-
Package:Bulk
Part Status:Active
IGBT Type:Field Stop
Voltage - Collector Emitter Breakdown (Max):600 V
Current - Collector (Ic) (Max):150 A
Current - Collector Pulsed (Icm):225 A
Vce(on) (Max) @ Vge, Ic:2.5V @ 15V, 75A
Power - Max:750 W
Switching Energy:2.3mJ (on), 770µJ (off)
Input Type:Standard
Gate Charge:248 nC
Td (on/off) @ 25°C:24ns/136ns
Test Condition:400V, 75A, 3Ohm, 15V
Reverse Recovery Time (trr):55 ns
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Package / Case:TO-247-3 Variant
Supplier Device Package:PowerTO-247-3
FGY75N60SMD is available at GangBo-ic.com, Please review product page below for detailed information, including FGY75N60SMD price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for FGY75N60SMD to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

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