







MEMS OSC XO 50.0000MHZ LVDS SMD
XTAL OSC VCXO 77.7600MHZ LVDS
IGBT 1200V 300W TO247AD
IC DGTL POT 10KOHM 100TAP 8SOIC
| Type | Description |
|---|---|
| Series: | GenX3™ |
| Package: | Tube |
| Part Status: | Active |
| IGBT Type: | PT |
| Voltage - Collector Emitter Breakdown (Max): | 1200 V |
| Current - Collector (Ic) (Max): | - |
| Current - Collector Pulsed (Icm): | 150 A |
| Vce(on) (Max) @ Vge, Ic: | 3.5V @ 15V, 30A |
| Power - Max: | 300 W |
| Switching Energy: | 3.47mJ (on), 2.16mJ (off) |
| Input Type: | Standard |
| Gate Charge: | 87 nC |
| Td (on/off) @ 25°C: | 16ns/127ns |
| Test Condition: | 960V, 30A, 5Ohm, 15V |
| Reverse Recovery Time (trr): | 100 ns |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Mounting Type: | Through Hole |
| Package / Case: | TO-247-3 |
| Supplier Device Package: | TO-247AD (IXGH) |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
|
|
STGW60H65DFB-4STMicroelectronics |
IGBT |
|
|
IRGB4610DPBFRochester Electronics |
IGBT WITH RECOVERY DIODE |
|
|
IGW20N60H3Rochester Electronics |
IGW20N60 - DISCRETE IGBT WITHOUT |
|
|
FGH15T120SMD-F155Sanyo Semiconductor/ON Semiconductor |
IGBT 1200V 30A 333W TO247-3 |
|
|
IRGIB15B60KD1PIR (Infineon Technologies) |
IGBT 600V 19A 52W TO220FP |
|
|
STGWA15H120DF2STMicroelectronics |
IGBT HB 1200V 15A HS TO247-3 |
|
|
APT25GT120BRGRoving Networks / Microchip Technology |
IGBT 1200V 54A 347W TO247 |
|
|
IXYT30N65C3H1HVWickmann / Littelfuse |
IGBT 650V 60A 270W TO268HV |
|
|
STGB30H60DLFBSTMicroelectronics |
TRENCH GATE FIELD-STOP IGBT, HB |
|
|
IKZ75N65NH5XKSA1Rochester Electronics |
IKZ75N65 - DISCRETE IGBT WITH AN |
|
|
STGFW20H65FBSTMicroelectronics |
IGBT 650V 40A 52W TO3PF |
|
|
HGTG40N60B3Rochester Electronics |
70A, 600V, UFS N-CHANNEL IGBT |
|
|
NGTB35N65FL2WGSanyo Semiconductor/ON Semiconductor |
IGBT TRENCH/FS 650V 70A TO247 |