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IKW03N120H2FKSA1

IKW03N120H2FKSA1

DISCRETE IGBT WITH DIODE

IKW03N120H2FKSA1

IKW03N120H2FKSA1

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Part No :

IKW03N120H2FKSA1

Manufacturer
Rochester Electronics
Description
DISCRETE IGBT WITH DIODE
Catalog
Transistors - IGBTs - Single
Availability
13415 pieces
Shipped from
HK warehouse
Expected Shipping Date
Feb 26 - Mar 02 2025
PDF
IKW03N120H2FKSA1 PDF
Type Description
Series:-
Package:Tube
Part Status:Obsolete
IGBT Type:-
Voltage - Collector Emitter Breakdown (Max):1.2 V
Current - Collector (Ic) (Max):9.6 A
Current - Collector Pulsed (Icm):9.9 A
Vce(on) (Max) @ Vge, Ic:2.8V @ 15V, 3A
Power - Max:62.5 W
Switching Energy:290µJ
Input Type:Standard
Gate Charge:22 nC
Td (on/off) @ 25°C:9.2ns/281ns
Test Condition:800V, 3A, 82Ohm, 15V
Reverse Recovery Time (trr):42 ns
Operating Temperature:-40°C ~ 150°C (TJ)
Mounting Type:Through Hole
Package / Case:TO-247-3
Supplier Device Package:PG-TO247-3
IKW03N120H2FKSA1 is available at GangBo-ic.com, Please review product page below for detailed information, including IKW03N120H2FKSA1 price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for IKW03N120H2FKSA1 to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

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