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GT30J121(Q)

GT30J121(Q)

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GT30J121(Q)

GT30J121(Q)

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Part No :

GT30J121(Q)

Manufacturer
Toshiba Electronic Devices and Storage Corporation
Description
IGBT 600V 30A 170W TO3PN
Catalog
Transistors - IGBTs - Single
Availability
15300 pieces
Shipped from
HK warehouse
Expected Shipping Date
Feb 25 - Mar 01 2025
Type Description
Series:*
Package:Tube
Part Status:Active
IGBT Type:-
Voltage - Collector Emitter Breakdown (Max):600 V
Current - Collector (Ic) (Max):30 A
Current - Collector Pulsed (Icm):60 A
Vce(on) (Max) @ Vge, Ic:2.45V @ 15V, 30A
Power - Max:170 W
Switching Energy:1mJ (on), 800µJ (off)
Input Type:Standard
Gate Charge:-
Td (on/off) @ 25°C:90ns/300ns
Test Condition:300V, 30A, 24Ohm, 15V
Reverse Recovery Time (trr):-
Operating Temperature:-
Mounting Type:Through Hole
Package / Case:TO-3P-3, SC-65-3
Supplier Device Package:TO-3P(N)
GT30J121(Q) is available at GangBo-ic.com, Please review product page below for detailed information, including GT30J121(Q) price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for GT30J121(Q) to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK

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