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STGP4M65DF2

STGP4M65DF2

IGBT M SERIES 650V 4A LOW LOSS

STGP4M65DF2

STGP4M65DF2

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Part No :

STGP4M65DF2

Manufacturer
STMicroelectronics
Description
IGBT M SERIES 650V 4A LOW LOSS
Catalog
Transistors - IGBTs - Single
Availability
105210 pieces
Shipped from
HK warehouse
Expected Shipping Date
Feb 24 - Feb 28 2025
PDF
STGP4M65DF2 PDF
Type Description
Series:M
Package:Tube
Part Status:Active
IGBT Type:Trench Field Stop
Voltage - Collector Emitter Breakdown (Max):650 V
Current - Collector (Ic) (Max):8 A
Current - Collector Pulsed (Icm):16 A
Vce(on) (Max) @ Vge, Ic:2.1V @ 15V, 4A
Power - Max:68 W
Switching Energy:40µJ (on), 136µJ (off)
Input Type:Standard
Gate Charge:15.2 nC
Td (on/off) @ 25°C:12ns/86ns
Test Condition:400V, 4A, 47Ohm, 15V
Reverse Recovery Time (trr):133 ns
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Package / Case:TO-220-3
Supplier Device Package:TO-220AB
STGP4M65DF2 is available at GangBo-ic.com, Please review product page below for detailed information, including STGP4M65DF2 price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for STGP4M65DF2 to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK

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