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FGH50N3

FGH50N3

INSULATED GATE BIPOLAR TRANSISTO

FGH50N3

FGH50N3

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Part No :

FGH50N3

Manufacturer
Rochester Electronics
Description
INSULATED GATE BIPOLAR TRANSISTO
Catalog
Transistors - IGBTs - Single
Availability
10437 pieces
Shipped from
HK warehouse
Expected Shipping Date
Feb 19 - Feb 23 2025
PDF
FGH50N3 PDF
Type Description
Series:-
Package:Bulk
Part Status:Active
IGBT Type:PT
Voltage - Collector Emitter Breakdown (Max):300 V
Current - Collector (Ic) (Max):75 A
Current - Collector Pulsed (Icm):240 A
Vce(on) (Max) @ Vge, Ic:1.4V @ 15V, 30A
Power - Max:463 W
Switching Energy:130µJ (on), 92µJ (off)
Input Type:Standard
Gate Charge:180 nC
Td (on/off) @ 25°C:20ns/135ns
Test Condition:180V, 30A, 5Ohm, 15V
Reverse Recovery Time (trr):-
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Package / Case:TO-247-3
Supplier Device Package:TO-247-3
FGH50N3 is available at GangBo-ic.com, Please review product page below for detailed information, including FGH50N3 price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for FGH50N3 to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

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