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SKB02N120ATMA1

SKB02N120ATMA1

IGBT, 6.2A I(C), 1200V V(BR)CES,

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SKB02N120ATMA1

SKB02N120ATMA1

Image is for reference, please contact us to get the real picture

Part No :

SKB02N120ATMA1

Manufacturer
Rochester Electronics
Description
IGBT, 6.2A I(C), 1200V V(BR)CES,
Catalog
Transistors - IGBTs - Single
Availability
16476 pieces
Shipped from
HK warehouse
Expected Shipping Date
Feb 19 - Feb 23 2025
PDF
SKB02N120ATMA1 PDF
Type Description
Series:-
Package:Bulk
Part Status:Active
IGBT Type:NPT
Voltage - Collector Emitter Breakdown (Max):1.2 V
Current - Collector (Ic) (Max):6.2 A
Current - Collector Pulsed (Icm):9.6 A
Vce(on) (Max) @ Vge, Ic:3.6V @ 15V, 2A
Power - Max:62 W
Switching Energy:220µJ
Input Type:Standard
Gate Charge:11 nC
Td (on/off) @ 25°C:23ns/260ns
Test Condition:800V, 2A, 91Ohm, 15V
Reverse Recovery Time (trr):50 ns
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package:PG-TO263-3-2
SKB02N120ATMA1 is available at GangBo-ic.com, Please review product page below for detailed information, including SKB02N120ATMA1 price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for SKB02N120ATMA1 to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

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