Type | Description |
---|---|
Series: | - |
Package: | Tube |
Part Status: | Obsolete |
IGBT Type: | - |
Voltage - Collector Emitter Breakdown (Max): | 600 V |
Current - Collector (Ic) (Max): | 65 A |
Current - Collector Pulsed (Icm): | 72 A |
Vce(on) (Max) @ Vge, Ic: | 1.9V @ 15V, 24A |
Power - Max: | 250 W |
Switching Energy: | 100µJ (on), 600µJ (off) |
Input Type: | Standard |
Gate Charge: | 75 nC |
Td (on/off) @ 25°C: | 40ns/105ns |
Test Condition: | 400V, 24A, 10Ohm, 15V |
Reverse Recovery Time (trr): | - |
Operating Temperature: | -40°C ~ 175°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | TO-247-3 |
Supplier Device Package: | TO-247AD |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
![]() |
STGB19NC60WT4STMicroelectronics |
IGBT 600V 40A 130W D2PAK |
![]() |
SKW20N60FKSA1Rochester Electronics |
IGBT, 40A, 600V, N-CHANNEL |
![]() |
IXA4IF1200UC-TRLWickmann / Littelfuse |
IGBT 1200V 9A 45W TO252AA |
![]() |
STGW30NC60WSTMicroelectronics |
IGBT 600V 60A 200W TO220 |
![]() |
FGB20N60SFSanyo Semiconductor/ON Semiconductor |
IGBT FIELD STOP 600V 40A D2PAK |
![]() |
AIHD15N60RFATMA1IR (Infineon Technologies) |
IC DISCRETE 600V TO252-3 |
![]() |
NGB8206NT4GRochester Electronics |
INSULATED GATE BIPOLAR TRANSISTO |
![]() |
ISL9V3040S3STSanyo Semiconductor/ON Semiconductor |
IGBT 430V 21A TO263AB |
![]() |
APT44GA60BD30Roving Networks / Microchip Technology |
IGBT 600V 78A 337W TO-247 |
![]() |
IRGPS4067DPBFRochester Electronics |
IRGPS4067 - DISCRETE IGBT WITH A |
![]() |
ISL9V3040D3STSanyo Semiconductor/ON Semiconductor |
IGBT 430V 21A TO252AA |
![]() |
APT25GP90BDQ1GRoving Networks / Microchip Technology |
IGBT 900V 72A 417W TO247 |
![]() |
IKD15N60RAATMA1IR (Infineon Technologies) |
IGBT 600V 30A 250W TO252-3 |