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HGTP12N60A4D

HGTP12N60A4D

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Part No :

HGTP12N60A4D

Manufacturer
Sanyo Semiconductor/ON Semiconductor
Description
IGBT 600V 54A TO220-3
Catalog
Transistors - IGBTs - Single
Availability
10211 pieces
Shipped from
HK warehouse
Expected Shipping Date
Jun 03 - Jun 07 2024
PDF
HGTP12N60A4D PDF
Type Description
Series:-
Package:Tube
Part Status:Last Time Buy
IGBT Type:-
Voltage - Collector Emitter Breakdown (Max):600 V
Current - Collector (Ic) (Max):54 A
Current - Collector Pulsed (Icm):96 A
Vce(on) (Max) @ Vge, Ic:2.7V @ 15V, 12A
Power - Max:167 W
Switching Energy:55µJ (on), 50µJ (off)
Input Type:Standard
Gate Charge:78 nC
Td (on/off) @ 25°C:17ns/96ns
Test Condition:390V, 12A, 10Ohm, 15V
Reverse Recovery Time (trr):30 ns
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Package / Case:TO-220-3
Supplier Device Package:TO-220-3
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