Type | Description |
---|---|
Series: | - |
Package: | Tube |
Part Status: | Obsolete |
IGBT Type: | - |
Voltage - Collector Emitter Breakdown (Max): | 600 V |
Current - Collector (Ic) (Max): | 13 A |
Current - Collector Pulsed (Icm): | 52 A |
Vce(on) (Max) @ Vge, Ic: | 2.6V @ 15V, 6.5A |
Power - Max: | 60 W |
Switching Energy: | 85µJ (on), 95µJ (off) |
Input Type: | Standard |
Gate Charge: | 25 nC |
Td (on/off) @ 25°C: | 20ns/70ns |
Test Condition: | 300V, 6.5A, 50Ohm, 15V |
Reverse Recovery Time (trr): | 55 ns |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | TO-220-3 |
Supplier Device Package: | TO-220-3 |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
STGWT20H65FBSTMicroelectronics |
IGBT 650V 40A 168W TO3P |
|
IRG8P75N65UD1-EPBFRochester Electronics |
IRG8P75N65 - 650V 75A, IGBT |
|
IRG4BC20KDSTRLPIR (Infineon Technologies) |
IGBT 600V 16A 60W D2PAK |
|
IKA08N65H5XKSA1IR (Infineon Technologies) |
IGBT 650V 10.8A TO220-3 |
|
IRGS14C40LTRLPRochester Electronics |
IGNITION IGBT WITH ON-CHIP GATE- |
|
HGTD3N60C3S9ARochester Electronics |
N-CHANNEL IGBT |
|
IXYH16N170CV1Wickmann / Littelfuse |
IGBT 1.7KV 40A TO247 |
|
STGWA40S120DF3STMicroelectronics |
IGBT 1200V 40A TO247-3L |
|
AFGHL75T65SQDTSanyo Semiconductor/ON Semiconductor |
650V/75A FS4 IGBT TO247 L |
|
NGTB40N120IHRWGSanyo Semiconductor/ON Semiconductor |
IGBT 1200V 80A 384W TO247 |
|
FGA40S65SHRochester Electronics |
INSULATED GATE BIPOLAR TRANSISTO |
|
IKD10N60RFAATMA1IR (Infineon Technologies) |
IGBT 600V 20A 150W PG-TO252-3 |
|
APT35GA90BRoving Networks / Microchip Technology |
IGBT 900V 63A 290W TO-247 |