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FGA50N100BNTD2

FGA50N100BNTD2

IGBT 1000V 50A 156W TO3P

FGA50N100BNTD2

FGA50N100BNTD2

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Part No :

FGA50N100BNTD2

Manufacturer
Sanyo Semiconductor/ON Semiconductor
Description
IGBT 1000V 50A 156W TO3P
Catalog
Transistors - IGBTs - Single
Availability
13150 pieces
Shipped from
HK warehouse
Expected Shipping Date
Dec 04 - Dec 08 2024
PDF
FGA50N100BNTD2 PDF
Type Description
Series:-
Package:Tube
Part Status:Last Time Buy
IGBT Type:NPT and Trench
Voltage - Collector Emitter Breakdown (Max):1000 V
Current - Collector (Ic) (Max):50 A
Current - Collector Pulsed (Icm):200 A
Vce(on) (Max) @ Vge, Ic:2.9V @ 15V, 60A
Power - Max:156 W
Switching Energy:-
Input Type:Standard
Gate Charge:257 nC
Td (on/off) @ 25°C:34ns/243ns
Test Condition:600V, 60A, 10Ohm, 15V
Reverse Recovery Time (trr):75 ns
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Package / Case:TO-3P-3, SC-65-3
Supplier Device Package:TO-3P
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