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NGTB03N60R2DT4G

NGTB03N60R2DT4G

IGBT 9A 600V DPAK

NGTB03N60R2DT4G

NGTB03N60R2DT4G

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Part No :

NGTB03N60R2DT4G

Manufacturer
Sanyo Semiconductor/ON Semiconductor
Description
IGBT 9A 600V DPAK
Catalog
Transistors - IGBTs - Single
Availability
574457 pieces
Shipped from
HK warehouse
Expected Shipping Date
Feb 24 - Feb 28 2025
PDF
NGTB03N60R2DT4G PDF
Type Description
Series:-
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
IGBT Type:-
Voltage - Collector Emitter Breakdown (Max):600 V
Current - Collector (Ic) (Max):9 A
Current - Collector Pulsed (Icm):12 A
Vce(on) (Max) @ Vge, Ic:2.1V @ 15V, 3A
Power - Max:49 W
Switching Energy:50µJ (on), 27µJ (off)
Input Type:Standard
Gate Charge:17 nC
Td (on/off) @ 25°C:27ns/59ns
Test Condition:300V, 3A, 30Ohm, 15V
Reverse Recovery Time (trr):65 ns
Operating Temperature:175°C (TJ)
Mounting Type:Surface Mount
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package:DPAK
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