IGBT PT MOS 8 SINGLE 900 V 80 A
Type | Description |
---|---|
Series: | POWER MOS 8® |
Package: | Tube |
Part Status: | Active |
IGBT Type: | PT |
Voltage - Collector Emitter Breakdown (Max): | 900 V |
Current - Collector (Ic) (Max): | 145 A |
Current - Collector Pulsed (Icm): | 239 A |
Vce(on) (Max) @ Vge, Ic: | 3.1V @ 15V, 47A |
Power - Max: | 625 W |
Switching Energy: | 1.625mJ (on), 1.389mJ (off) |
Input Type: | Standard |
Gate Charge: | 200 nC |
Td (on/off) @ 25°C: | 18ns/149ns |
Test Condition: | 600V, 47A, 4.7Ohm, 15V |
Reverse Recovery Time (trr): | - |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | TO-268-3, D³Pak (2 Leads + Tab), TO-268AA |
Supplier Device Package: | D3PAK |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
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