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HGTP5N120BND

HGTP5N120BND

IGBT 1200V 21A 167W TO220AB

B32562J3474J289

B32562J3474J289

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HGTP5N120BND

HGTP5N120BND

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Part No :

HGTP5N120BND

Manufacturer
Sanyo Semiconductor/ON Semiconductor
Description
IGBT 1200V 21A 167W TO220AB
Catalog
Transistors - IGBTs - Single
Availability
364336 pieces
Shipped from
HK warehouse
Expected Shipping Date
Feb 25 - Mar 01 2025
PDF
HGTP5N120BND PDF
Type Description
Series:-
Package:Tube
Part Status:Not For New Designs
IGBT Type:NPT
Voltage - Collector Emitter Breakdown (Max):1200 V
Current - Collector (Ic) (Max):21 A
Current - Collector Pulsed (Icm):40 A
Vce(on) (Max) @ Vge, Ic:2.7V @ 15V, 5A
Power - Max:167 W
Switching Energy:450µJ (on), 390µJ (off)
Input Type:Standard
Gate Charge:53 nC
Td (on/off) @ 25°C:22ns/160ns
Test Condition:960V, 5A, 25Ohm, 15V
Reverse Recovery Time (trr):65 ns
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Package / Case:TO-220-3
Supplier Device Package:TO-220-3
HGTP5N120BND is available at GangBo-ic.com, Please review product page below for detailed information, including HGTP5N120BND price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for HGTP5N120BND to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

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