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NGTB15N135IHRWG

NGTB15N135IHRWG

INSULATED GATE BIPOLAR TRANSISTO

NGTB15N135IHRWG

NGTB15N135IHRWG

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Part No :

NGTB15N135IHRWG

Manufacturer
Rochester Electronics
Description
INSULATED GATE BIPOLAR TRANSISTO
Catalog
Transistors - IGBTs - Single
Availability
14680 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 17 - Nov 21 2024
PDF
NGTB15N135IHRWG PDF
Type Description
Series:-
Package:Bulk
Part Status:Active
IGBT Type:Trench Field Stop
Voltage - Collector Emitter Breakdown (Max):1.35 V
Current - Collector (Ic) (Max):30 A
Current - Collector Pulsed (Icm):60 A
Vce(on) (Max) @ Vge, Ic:2.65V @ 15V, 15A
Power - Max:357 W
Switching Energy:420µJ (off)
Input Type:Standard
Gate Charge:156 nC
Td (on/off) @ 25°C:-/170ns
Test Condition:600V, 15A, 10Ohm, 15V
Reverse Recovery Time (trr):-
Operating Temperature:-40°C ~ 175°C (TJ)
Mounting Type:Through Hole
Package / Case:TO-247-3
Supplier Device Package:TO-247
NGTB15N135IHRWG is available at GangBo-ic.com, Please review product page below for detailed information, including NGTB15N135IHRWG price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for NGTB15N135IHRWG to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

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