IGBT
CAP CER 220PF 100V BP 1206
RF SHIELD 1.75" X 3" T/H
Type | Description |
---|---|
Series: | - |
Package: | Tube |
Part Status: | Active |
IGBT Type: | - |
Voltage - Collector Emitter Breakdown (Max): | 1700 V |
Current - Collector (Ic) (Max): | 280 A |
Current - Collector Pulsed (Icm): | 1050 A |
Vce(on) (Max) @ Vge, Ic: | 2.6V @ 15V, 100A |
Power - Max: | 1250 W |
Switching Energy: | 28mJ (on), 30mJ (off) |
Input Type: | Standard |
Gate Charge: | 540 nC |
Td (on/off) @ 25°C: | 37ns/320ns |
Test Condition: | 850V, 100A, 1Ohm, 15V |
Reverse Recovery Time (trr): | 133 ns |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Chassis Mount |
Package / Case: | SOT-227-4, miniBLOC |
Supplier Device Package: | SOT-227B |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
IGB50N60TATMA1IR (Infineon Technologies) |
IGBT TRENCH 600V 100A TO263-3-2 |
|
IGTM20N40ARochester Electronics |
N CHANNEL IGBT FOR SWITCHING APP |
|
SGP15N60RUFTURochester Electronics |
N-CHANNEL IGBT |
|
FGH40T65UPDSanyo Semiconductor/ON Semiconductor |
IGBT TRENCH/FS 650V 80A TO247-3 |
|
FGH75T65SHDT-F155Sanyo Semiconductor/ON Semiconductor |
IGBT 650V 150A 455W TO-247 |
|
STGWA75H65DFB2STMicroelectronics |
TRENCH GATE FIELD-STOP, 650 V, 7 |
|
IKD15N60RATMA1IR (Infineon Technologies) |
IGBT 600V 30A TO252-3 |
|
FGH40T65SPD-F085Rochester Electronics |
INSULATED GATE BIPOLAR TRANSISTO |
|
MMIX1X200N60B3H1Wickmann / Littelfuse |
IGBT 600V 175A 520W SMPD |
|
IRGP4066DPBFIR (Infineon Technologies) |
IGBT TRENCH 600V 140A TO247AC |
|
IGP40N65F5XKSA1IR (Infineon Technologies) |
IGBT 650V 74A TO220-3 |
|
IRG4PC30UDPBFRochester Electronics |
ULTRAFAST COPACK IGBT W/ULTRAFAS |
|
IRG4IBC10UDPBFRochester Electronics |
ULTRAFAST CO-PACK IGBT W/ULTRAFA |