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RGT8NS65DGTL

RGT8NS65DGTL

IGBT 650V 8A 65W TO-263S

RGT8NS65DGTL

RGT8NS65DGTL

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Part No :

RGT8NS65DGTL

Manufacturer
ROHM Semiconductor
Description
IGBT 650V 8A 65W TO-263S
Catalog
Transistors - IGBTs - Single
Availability
10922 pieces
Shipped from
HK warehouse
Expected Shipping Date
Dec 03 - Dec 07 2024
PDF
RGT8NS65DGTL PDF
Type Description
Series:-
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
IGBT Type:Trench Field Stop
Voltage - Collector Emitter Breakdown (Max):650 V
Current - Collector (Ic) (Max):8 A
Current - Collector Pulsed (Icm):12 A
Vce(on) (Max) @ Vge, Ic:2.1V @ 15V, 4A
Power - Max:65 W
Switching Energy:-
Input Type:Standard
Gate Charge:13.5 nC
Td (on/off) @ 25°C:17ns/69ns
Test Condition:400V, 4A, 50Ohm, 15V
Reverse Recovery Time (trr):40 ns
Operating Temperature:-40°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package:LPDS (TO-263S)
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