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SG73P2BTTD1021D

SG73P2BTTD1021D

RES 1.02K OHM 0.5% 1/3W 1206

NGB8207ABNT4G

NGB8207ABNT4G

INSULATED GATE BIPOLAR TRANSISTO

NGB8207ABNT4G

NGB8207ABNT4G

Image is for reference, please contact us to get the real picture

Part No :

NGB8207ABNT4G

Manufacturer
Rochester Electronics
Description
INSULATED GATE BIPOLAR TRANSISTO
Catalog
Transistors - IGBTs - Single
Availability
31696 pieces
Shipped from
HK warehouse
Expected Shipping Date
Feb 26 - Mar 02 2025
PDF
NGB8207ABNT4G PDF
Type Description
Series:-
Package:Bulk
Part Status:Active
IGBT Type:-
Voltage - Collector Emitter Breakdown (Max):365 V
Current - Collector (Ic) (Max):20 A
Current - Collector Pulsed (Icm):50 A
Vce(on) (Max) @ Vge, Ic:2.2V @ 3.7V, 10A
Power - Max:165 W
Switching Energy:-
Input Type:Logic
Gate Charge:-
Td (on/off) @ 25°C:-
Test Condition:-
Reverse Recovery Time (trr):-
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package:D2PAK
NGB8207ABNT4G is available at GangBo-ic.com, Please review product page below for detailed information, including NGB8207ABNT4G price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for NGB8207ABNT4G to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

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