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IRGR2B60KDPBF

IRGR2B60KDPBF

IGBT WITH RECOVERY DIODE

IRGR2B60KDPBF

IRGR2B60KDPBF

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Part No :

IRGR2B60KDPBF

Manufacturer
Rochester Electronics
Description
IGBT WITH RECOVERY DIODE
Catalog
Transistors - IGBTs - Single
Availability
10572 pieces
Shipped from
HK warehouse
Expected Shipping Date
Sep 29 - Oct 03 2024
PDF
IRGR2B60KDPBF PDF
Type Description
Series:-
Package:Tube
Part Status:Obsolete
IGBT Type:-
Voltage - Collector Emitter Breakdown (Max):600 V
Current - Collector (Ic) (Max):6.3 A
Current - Collector Pulsed (Icm):8 A
Vce(on) (Max) @ Vge, Ic:2.25V @ 15V, 2A
Power - Max:35 W
Switching Energy:74µJ (on), 39µJ (off)
Input Type:Standard
Gate Charge:12 nC
Td (on/off) @ 25°C:11ns/150ns
Test Condition:400V, 2A, 100Ohm, 15V
Reverse Recovery Time (trr):45 ns
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package:D-Pak
IRGR2B60KDPBF is available at GangBo-ic.com, Please review product page below for detailed information, including IRGR2B60KDPBF price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for IRGR2B60KDPBF to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK

Office Hours : Mon-Fri, 9:00-18:30(GMT+8)

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