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IRGP6630D-EPBF

IRGP6630D-EPBF

IGBT WITH RECOVERY DIODE

IRGP6630D-EPBF

IRGP6630D-EPBF

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Part No :

IRGP6630D-EPBF

Manufacturer
Rochester Electronics
Description
IGBT WITH RECOVERY DIODE
Catalog
Transistors - IGBTs - Single
Availability
10937 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 24 - Nov 28 2024
PDF
IRGP6630D-EPBF PDF
Type Description
Series:-
Package:Tube
Part Status:Obsolete
IGBT Type:-
Voltage - Collector Emitter Breakdown (Max):600 V
Current - Collector (Ic) (Max):47 A
Current - Collector Pulsed (Icm):54 A
Vce(on) (Max) @ Vge, Ic:1.95V @ 15V, 18A
Power - Max:192 W
Switching Energy:75µJ (on), 350µJ (off)
Input Type:Standard
Gate Charge:30 nC
Td (on/off) @ 25°C:40ns/95ns
Test Condition:400V, 18A, 22Ohm, 15V
Reverse Recovery Time (trr):70 ns
Operating Temperature:-40°C ~ 175°C (TJ)
Mounting Type:Through Hole
Package / Case:TO-247-3
Supplier Device Package:TO-247AD
IRGP6630D-EPBF is available at GangBo-ic.com, Please review product page below for detailed information, including IRGP6630D-EPBF price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for IRGP6630D-EPBF to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK

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