IGBT MOD 600V 580A INT-A-PAK
Type | Description |
---|---|
Series: | - |
Package: | Tube |
Part Status: | Active |
IGBT Type: | PT, Trench |
Configuration: | Half Bridge |
Voltage - Collector Emitter Breakdown (Max): | 600 V |
Current - Collector (Ic) (Max): | 580 A |
Power - Max: | 1136 W |
Vce(on) (Max) @ Vge, Ic: | 1.45V @ 15V, 300A |
Current - Collector Cutoff (Max): | 150 µA |
Input Capacitance (Cies) @ Vce: | - |
Input: | Standard |
NTC Thermistor: | No |
Operating Temperature: | -40°C ~ 150°C (TJ) |
Mounting Type: | Chassis Mount |
Package / Case: | Dual INT-A-PAK (3 + 8) |
Supplier Device Package: | Dual INT-A-PAK |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
![]() |
VS-GB150TH120NVishay General Semiconductor – Diodes Division |
IGBT MOD 1200V 300A INT-A-PAK |
![]() |
MIO1200-33E10Wickmann / Littelfuse |
IGBT MODULE 3300V 1200A E10 |
![]() |
APTGT400SK120D3GMicrosemi |
IGBT MODULE 1200V 580A 2100W D3 |
![]() |
VS-GB300TH120UVishay General Semiconductor – Diodes Division |
IGBT MOD 1200V 530A INT-A-PAK |
![]() |
APTGF360U60D4GMicrosemi |
IGBT MODULE 600V 450A 1560W D4 |
![]() |
VS-GB400TH120UVishay General Semiconductor – Diodes Division |
IGBT MOD 1200V 660A INT-A-PAK |
![]() |
IRG7T150HF12BIR (Infineon Technologies) |
IGBT MOD 1200V 300A POWIR 62 |
![]() |
FZ1200R12KF4NOSA1IR (Infineon Technologies) |
IGBT MODULE 1200V 1200A |
![]() |
BSM75GD60DLCBOSA1IR (Infineon Technologies) |
IGBT MODULE 600V 95A 330W |
![]() |
IRG5K30FF06ZIR (Infineon Technologies) |
IGBT MOD 600V 60A EZIRPACK 1 |
![]() |
MIO1200-25E10Wickmann / Littelfuse |
IGBT MODULE 2500V 1200A E10 |
![]() |
APTGT150A1202GMicrosemi |
IGBT MODULE 1200V 220A 690W SP2 |
![]() |
IXB200I600NAWickmann / Littelfuse |
IGBT MODULE 6000V SOT227 |