







MEMS OSC XO 26.0000MHZ H/LV-CMOS
IC INTERFACE SPECIALIZED 16QSOP
RF DIODE SOD80 MINIMELF
IGBT MOD 600V 75A 260W POWIR 34
| Type | Description |
|---|---|
| Series: | - |
| Package: | Box |
| Part Status: | Obsolete |
| IGBT Type: | - |
| Configuration: | Half Bridge |
| Voltage - Collector Emitter Breakdown (Max): | 600 V |
| Current - Collector (Ic) (Max): | 75 A |
| Power - Max: | 260 W |
| Vce(on) (Max) @ Vge, Ic: | 2.7V @ 15V, 50A |
| Current - Collector Cutoff (Max): | 1 mA |
| Input Capacitance (Cies) @ Vce: | 2.6 nF @ 25 V |
| Input: | Standard |
| NTC Thermistor: | No |
| Operating Temperature: | -40°C ~ 150°C (TJ) |
| Mounting Type: | Chassis Mount |
| Package / Case: | POWIR® 34 Module |
| Supplier Device Package: | POWIR® 34 |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
|
|
VS-GT75NP120NVishay General Semiconductor – Diodes Division |
IGBT MOD 1200V 150A INT-A-PAK |
|
|
VS-GT75LP120NVishay General Semiconductor – Diodes Division |
IGBT MOD 1200V 150A INT-A-PAK |
|
|
APTGF90TDU60PGMicrosemi |
IGBT MODULE 600V 110A 416W SP6P |
|
|
F575R06KE3B5BOSA1IR (Infineon Technologies) |
IGBT MODULE 600V 75A 250W |
|
|
APTGV50H120BTPGMicrosemi |
IGBT MODULE 1200V 75A 270W SP6P |
|
|
APTGT75DA120T1GMicrosemi |
IGBT MODULE 1200V 110A 357W SP1 |
|
|
MIAA10WB600TMHWickmann / Littelfuse |
IGBT MOD 600V 18A 70W MINIPACK2 |
|
|
CM50TF-12HPowerex, Inc. |
IGBT MODULE 600V 50A 250W |
|
|
APTGT30DA170T1GMicrosemi |
IGBT MODULE 1700V 45A 210W SP1 |
|
|
CM300DU-24HPowerex, Inc. |
IGBT MOD 1200V 300A 1130W |
|
|
APTGT75A1202GMicrosemi |
IGBT MODULE 1200V 110A 357W SP2 |
|
|
CM150DY-24NFPowerex, Inc. |
IGBT MOD 1200V 150A 780W |
|
|
APTGT75SK170D1GMicrosemi |
IGBT MODULE 1700V 120A 520W D1 |