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NXH50C120L2C2ES1G

NXH50C120L2C2ES1G

IGBT MOD 1200V 50A 26DIP

NXH50C120L2C2ES1G

NXH50C120L2C2ES1G

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Part No :

NXH50C120L2C2ES1G

Manufacturer
Sanyo Semiconductor/ON Semiconductor
Description
IGBT MOD 1200V 50A 26DIP
Catalog
Transistors - IGBTs - Modules
Availability
695469 pieces
Shipped from
HK warehouse
Expected Shipping Date
Feb 08 - Feb 12 2025
Type Description
Series:-
Package:Tube
Part Status:Active
IGBT Type:-
Configuration:Three Phase Inverter with Brake
Voltage - Collector Emitter Breakdown (Max):1200 V
Current - Collector (Ic) (Max):50 A
Power - Max:20 mW
Vce(on) (Max) @ Vge, Ic:2.4V @ 15V, 50A
Current - Collector Cutoff (Max):250 µA
Input Capacitance (Cies) @ Vce:11.89 nF @ 20 V
Input:Three Phase Bridge Rectifier
NTC Thermistor:Yes
Operating Temperature:-40°C ~ 150°C (TJ)
Mounting Type:Through Hole
Package / Case:26-PowerDIP Module (1.199", 47.20mm)
Supplier Device Package:26-DIP
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