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NXH100B120H3Q0STG

NXH100B120H3Q0STG

IGBT MODULE 1200V 50A 186W PIM22

NXH100B120H3Q0STG

NXH100B120H3Q0STG

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Part No :

NXH100B120H3Q0STG

Manufacturer
Sanyo Semiconductor/ON Semiconductor
Description
IGBT MODULE 1200V 50A 186W PIM22
Catalog
Transistors - IGBTs - Modules
Availability
275427 pieces
Shipped from
HK warehouse
Expected Shipping Date
Oct 18 - Oct 22 2025
Type Description
Series:-
Package:Tray
Part Status:Active
IGBT Type:Trench Field Stop
Configuration:2 Independent
Voltage - Collector Emitter Breakdown (Max):1200 V
Current - Collector (Ic) (Max):50 A
Power - Max:186 W
Vce(on) (Max) @ Vge, Ic:2.3V @ 15V, 50A
Current - Collector Cutoff (Max):200 µA
Input Capacitance (Cies) @ Vce:9.075 nF @ 20 V
Input:Standard
NTC Thermistor:No
Operating Temperature:-40°C ~ 150°C (TJ)
Mounting Type:Chassis Mount
Package / Case:Module
Supplier Device Package:22-PIM/Q0BOOST (55x32.5)
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