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BSM150GB120DN2HOSA1

BSM150GB120DN2HOSA1

IGBT MOD 1200V 210A 1250W

BSM150GB120DN2HOSA1

BSM150GB120DN2HOSA1

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Part No :

BSM150GB120DN2HOSA1

Manufacturer
IR (Infineon Technologies)
Description
IGBT MOD 1200V 210A 1250W
Catalog
Transistors - IGBTs - Modules
Availability
885388 pieces
Shipped from
HK warehouse
Expected Shipping Date
Feb 08 - Feb 12 2025
Type Description
Series:-
Package:Tray
Part Status:Not For New Designs
IGBT Type:-
Configuration:Half Bridge
Voltage - Collector Emitter Breakdown (Max):1200 V
Current - Collector (Ic) (Max):210 A
Power - Max:1250 W
Vce(on) (Max) @ Vge, Ic:3V @ 15V, 150A
Current - Collector Cutoff (Max):2.8 mA
Input Capacitance (Cies) @ Vce:11 nF @ 25 V
Input:Standard
NTC Thermistor:No
Operating Temperature:150°C (TJ)
Mounting Type:Chassis Mount
Package / Case:Module
Supplier Device Package:Module
BSM150GB120DN2HOSA1 is available at GangBo-ic.com, Please review product page below for detailed information, including BSM150GB120DN2HOSA1 price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for BSM150GB120DN2HOSA1 to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK

Office Hours : Mon-Fri, 9:00-18:30(GMT+8)

[email protected]

Phone: 00852-52612101

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