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IFS75B12N3E4B31BOSA1

IFS75B12N3E4B31BOSA1

IGBT MOD 1200V 150A 385W

IFS75B12N3E4B31BOSA1

IFS75B12N3E4B31BOSA1

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Part No :

IFS75B12N3E4B31BOSA1

Manufacturer
IR (Infineon Technologies)
Description
IGBT MOD 1200V 150A 385W
Catalog
Transistors - IGBTs - Modules
Availability
235223 pieces
Shipped from
HK warehouse
Expected Shipping Date
Feb 06 - Feb 10 2025
PDF
IFS75B12N3E4B31BOSA1 PDF
Type Description
Series:-
Package:Tray
Part Status:Active
IGBT Type:Trench Field Stop
Configuration:Full Bridge
Voltage - Collector Emitter Breakdown (Max):1200 V
Current - Collector (Ic) (Max):150 A
Power - Max:385 W
Vce(on) (Max) @ Vge, Ic:2.15V @ 15V, 75A
Current - Collector Cutoff (Max):1 mA
Input Capacitance (Cies) @ Vce:4.3 nF @ 25 V
Input:Standard
NTC Thermistor:Yes
Operating Temperature:-40°C ~ 150°C
Mounting Type:Chassis Mount
Package / Case:Module
Supplier Device Package:Module
IFS75B12N3E4B31BOSA1 is available at GangBo-ic.com, Please review product page below for detailed information, including IFS75B12N3E4B31BOSA1 price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for IFS75B12N3E4B31BOSA1 to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK

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