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DF75R12W1H4FB11BOMA2

DF75R12W1H4FB11BOMA2

IGBT MOD 1200V 25A 20MW

DF75R12W1H4FB11BOMA2

DF75R12W1H4FB11BOMA2

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Part No :

DF75R12W1H4FB11BOMA2

Manufacturer
IR (Infineon Technologies)
Description
IGBT MOD 1200V 25A 20MW
Catalog
Transistors - IGBTs - Modules
Availability
545154 pieces
Shipped from
HK warehouse
Expected Shipping Date
Feb 06 - Feb 10 2025
PDF
DF75R12W1H4FB11BOMA2 PDF
Type Description
Series:EasyPACK™ 1B
Package:Tray
Part Status:Last Time Buy
IGBT Type:-
Configuration:Three Phase Inverter
Voltage - Collector Emitter Breakdown (Max):1200 V
Current - Collector (Ic) (Max):25 A
Power - Max:20 mW
Vce(on) (Max) @ Vge, Ic:2.65V @ 15V, 25A
Current - Collector Cutoff (Max):1 mA
Input Capacitance (Cies) @ Vce:2 nF @ 25 V
Input:Standard
NTC Thermistor:Yes
Operating Temperature:-40°C ~ 150°C (TJ)
Mounting Type:Chassis Mount
Package / Case:Module
Supplier Device Package:Module
DF75R12W1H4FB11BOMA2 is available at GangBo-ic.com, Please review product page below for detailed information, including DF75R12W1H4FB11BOMA2 price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for DF75R12W1H4FB11BOMA2 to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

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