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DF200R12W1H3B27BOMA1

DF200R12W1H3B27BOMA1

IGBT MOD 1200V 30A 375W

DF200R12W1H3B27BOMA1

DF200R12W1H3B27BOMA1

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Part No :

DF200R12W1H3B27BOMA1

Manufacturer
IR (Infineon Technologies)
Description
IGBT MOD 1200V 30A 375W
Catalog
Transistors - IGBTs - Modules
Availability
257325 pieces
Shipped from
HK warehouse
Expected Shipping Date
Sep 23 - Sep 27 2024
PDF
DF200R12W1H3B27BOMA1 PDF
Type Description
Series:-
Package:Bulk
Part Status:Active
IGBT Type:-
Configuration:2 Independent
Voltage - Collector Emitter Breakdown (Max):1200 V
Current - Collector (Ic) (Max):30 A
Power - Max:375 W
Vce(on) (Max) @ Vge, Ic:1.3V @ 15V, 30A
Current - Collector Cutoff (Max):1 mA
Input Capacitance (Cies) @ Vce:2 nF @ 25 V
Input:Standard
NTC Thermistor:Yes
Operating Temperature:-40°C ~ 150°C
Mounting Type:Chassis Mount
Package / Case:Module
Supplier Device Package:Module
DF200R12W1H3B27BOMA1 is available at GangBo-ic.com, Please review product page below for detailed information, including DF200R12W1H3B27BOMA1 price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for DF200R12W1H3B27BOMA1 to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

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